Engineering Quantum Point Defects in 2D Transition Metal Dichalcogenides for Next Generation Quantum Devices
Description
Quantum Information Science and Engineering (QISE) seeks to develop next generation quantum technologies by leveraging superposition, entanglement, and coherence. This research aims to engineer quantum point defects in wideband gap monolayer transition metal dichalcogenides (TMDs), particularly Molybdenum Disulfide (MoS₂), to create stable, optically active spin defects for quantum sensing. The primary research question explores how atomic-scale defects in MoS₂ can be designed to function as coherent quantum emitters. We hypothesize that specific substitutional and vacancy-based defects will exhibit long spin coherence times and strong optical transitions, making them suitable for solid state quantum technologies. The objectives include computational modeling of defect states, controlled fabrication of defects, and advanced characterization to validate their quantum properties. Density functional theory (DFT) and quantum defect embedding theory (QDET) will be employed to predict defect stability, charge transition levels, and spin coherence. Experimentally, monolayer MoS₂ will be synthesized via chemical vapor deposition (CVD), with defects introduced using scanning tunneling microscopy (STM). Optical and spin properties will be assessed using photoluminescence spectroscopy, magnetic resonance techniques, and scanning tunneling spectroscopy. This research will provide critical insights into defect-host interactions in 2D materials, advancing scalable quantum sensing platforms