Date of Award

2011

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical Engineering

First Advisor

Iyer, Shanthi Dr.

Abstract

Transfer length measurements for various metal contacts on gallium tin zinc oxide film have been performed in this work to determine the specific contact resistivity. The investigated contacts are Al (100nm), Ti (20nm)/Al (30 nm)/Au (100nm) and Al (30nm)/ Au (50nm) and Al (30nm)/ Pt (50nm). The contacts were annealed after metal deposition at 250oC in nitrogen ambient for different durations. The effect of intervals of post deposition annealing on the electrical property of the contacts have also been studied. The processing of thin film transistor (TFT) on gallium tin zinc oxide film has also been studied. The parameters attempted at stages of the processing and the comparisons between the corresponding outcomes have been shown. Finally, improved TFT patterns have been demonstrated for the processing conditions thus optimized.

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