Date of Award
2011
Document Type
Thesis
Degree Name
Master of Science (MS)
Department
Electrical Engineering
First Advisor
Iyer, Shanthi Dr.
Abstract
A system was developed for characterizing molecular beam epitaxially grown III-V semiconductor materials and devices by measuring their photoluminescence and photoconductivity. The experimental system was tested on InSb substrates and a photoluminescence peak at 5.2 ± 0.1 µm was found, agreeing with published values. A photomask and photolithographic process for the fabrication of a P-I-N type photodetector device was developed, and a system was prepared for the measurement of the photoconductivity of the photodetector. A theoretical study was done for calculating the energy band structure of the semiconductor materials using the Kronig-Penney model. This model can predict the results of optical characterizations and act as a guide for the growth parameters to achieve a desired band structure. The methods in this thesis can describe, theoretically and experimentally, the band structure of the materials and devices grown in the lab.
Recommended Citation
Poe, Jonathan, "Development Of Theoretical Modeling And An Optical Characterization Systemfor Photodetectors In The 8-12 Îœm Wavelength Region" (2011). Theses. 60.
https://digital.library.ncat.edu/theses/60